Ion implantation is a process in which ions of an element are accelerated into a solid target in order to alter the physical, chemical, or electrical properties of the target. Ion implantation is by far the most important way to introduce dopant atoms into a silicon substrate, and is the only method discussed here.

Ion implantation The main methods used to manufacture doped silicon in semiconductor devices are ion implantation, gas source doping and solid source doping, metal finishing, and materials science research.

Injection materials:B、P、F、Al、N、Ar、Mg、Si and other elements;

Injection Angle: ±11°;

Wafer size: compatible with 6 inches or less;

High temperature oxidation, high temperature diffusion, rapid annealing